Lithium Niobate-On-Insulator Lithium Niobate-On-Insulator | UniversityWafer, Inc.

Lithium Niobate-On-Insulator (LNOI) Wafers

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X-LN Thin Film for Optical Wave-Guiding and Non-Linear Applications

A nanophotonics research lab requested the following quote:

I want 3 of the X-LN thin film: 500nm/ SiO2:2μm (thermal) / Silicon substrate: 0.5mm (high resi.>10000Ω-cm). The diameter should be 4" used for optical waveguiding and nonlinear applications.

UniversityWafer, Inc. Quoted:

We have the required LNOI thin film wafer from in stock,Spec. fully matched,Pls see below for the offer

X-LN thin film: 500nm/ SiO2:2μm (thermal) / Silicon substrate: 0.5mm (high resi.>10,000Ω-cm)

Reference #257797 for specs and pricing.

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Lithium Niobate on Oxide (LNON) Substrates for High-Performance Fiber Systems

A senior engineer requested the following quote:

We would like to inquire about options, availability and pricing of Lithium Niobate on oxide on Si wafers you show in your catalog (example below) in 400, 500 and 600nm LiNb thickness with 2um thick SiO2: X-LN thin film:600nm/ SiO2:2μm (thermal) / Silicon substrate: 0.5mm (high resi.>10000Ω-cm) Additionally, you indicate you have Optical Grade Lithium Niobate Wafers as thin as 180um in X, Y, Z orientation and 2", 3", 4" diameters. How much thinner can you thin any of these down (or X-cut in particular)? Can it be 50um? Let me know.

UniversityWafer, Inc. Quoted:

Pls see below for the offer on required LNOI Wafer.

Ø100mm of X-LN thin film:600nm/ SiO2:2μm (thermal) / Silicon substrate: 0.5mm (high resi.>10000Ω-cm)

Regarding your additional question,Do you mean you want 50um LN on Insulator/Si ? UW can supply this type of thick 50um LNOI Wafer. If it just the bare LN Substrate,We can not thinning down to 50um,the thinnest LN Wafer is 135um for 2'' one,fyi.

Reference # 254705 for specs and pricing.

LNON X-LN Thin Film Substrate for Ev Battery Research

A principal engineer requested the following quote:

Looking for Qty 10 of LNOI wafer: X-LN thin film:600nm/ SiO2:2μm (thermal) / Silicon substrate: 0.5mm (high resi.>10000Ω-cm).

UniversityWafer, Inc. Quoted:

Pls see below for the offer on required LNOI Wafer,

Qty 10 of LNOI wafer: X-LN thin film:600nm/ SiO2:2μm (thermal) / Silicon substrate: 0.5mm (high resi.>10000Ω-cm)

Reference #264412 for specs and pricing.

What is Lithium Niobate On Insulator?

Lithium niobate on insulator (LiNiO) is a newly discovered material in integrated photonics. This thin film is deposited on silica and promises excellent performance. It can be patterned into photonic integrated circuits and is very versatile. This material is suitable for optical phase modulators and has many potential applications. Here are the key advantages of LiNiO.

Erbium-doped LiNiO3 shows great promise for microwave and quantum photonics. Its electro-electric nature lithium niobate on insulator waferand low dispersion are good enough for telecommunication. The material can be used for a wide range of high-speed optical communication applications, such as the C-band. It can also be fabricated into quantum computers. Further research is needed to explore the possibilities of LiNiO3 in these applications.

Erbium-doped LiNiO3 exhibits excellent properties in microwave and quantum photonics. It is also very promising in telecommunication applications. With a bandgap of 3.8 nm, it is an ideal candidate for telecommunication C-bands. Its excellent electro-electric nature also makes it ideal for high-speed wireless communications. There is a need for improved power consumption in nonlinear devices.

Erbium-doped LiNiO3 is a highly promising candidate in telecommunication, microwave, and quantum photonic applications. Its electro-electric nature and high refractive index make it an ideal material for such applications. These materials are also suitable for telecommunication C-band and other high-speed communications. They are very cheap and can be found at a variety of locations.

One major advantage of LiNiO3 is its high refractive index contrast. This material is excellent for acoustic and optical applications. The LiNiO3 structure allows for ultrafast signal processing. In addition, its excellent electro-electric nature also provides a number of advantages. The crystals have a wide spectral range and a low sensitivity. Its crystalline structure is very flexible and can be molded into any shape.

This material has a unique electro-optic property. Its high refractive index contrast, coupled with the high-refractive index, makes this material ideal for acoustic and optical applications. Its chiral nature enables it to provide a wide range of wavelengths for various applications. This material can also be used as an antenna. This semiconductor is an excellent candidate for telecommunications.

The crystals of LiNiO are also useful in nonlinear optical applications. Periodically-polined LiNiO has an exceptional ability to produce coherent light. In addition to its high refractive index, the crystals can be produced in ultra-small sizes. The material can be used in lasers, amplifiers, and other electronic devices. This semiconductor is highly efficient in generating high-frequency signals.

Another promising application of LiNiO is in telecommunications. Its excellent electro-electric properties make it suitable for C-band communication. Besides that, it has great potential for telecommunications. Its notch bandwidth is 3.8 nm. There are several other applications of LiNiO. However, the most important use of LiNiO is in the development of ultra-fast optical systems.

The material's high refractive index makes it an excellent candidate for photonic applications. It has also shown excellent electro-optic properties. Its crystals can be used in lasers. Despite its low optical resistance, LiNiO can be used in nonlinear optics. They can be fabricated in a variety of sizes and shapes. Unlike conventional silicon wafers, LiNiO is lightweight and can be made into extremely small-sized devices.

X-LN Thin Films for Optics Research

A Senior Nanofabrication Engineer requested the following quote:

Can I geta quote and estimated lead time for: X-LN thin film:300nm/ SiO2:2μm (thermal) / Silicon substrate: 0.5mm (high resi.>10000Ω-cm).

UniversityWafer, Inc. Quoted:

4inch X-Cut LN thin film:300nm/ SiO2:2μm (thermal) / Silicon substrate: 0.5mm (high resi.>10000Ω-cm)

Reference #264464 for specs and pricing.

Optical Grade Lithium Niobate: X-LN Thin Film For Microbial Research

A biology researcher requested the following quote:

I am looking for Lithium Niobate, LiNbO3, on Insulator (LNOI), thin film on SiO2 on silicon substrate, 4 inch wafers. I am interested in your products in optical grade: X-LN thin film:600nm/ SiO2:2μm (thermal) / Silicon substrate: 0.5mm (high resi.>10000Ω-cm) X-LN thin film:600nm/ SiO2:4.7μm (thermal) / Silicon substrate: 0.5mm (high resi.>10000Ω-cm) Could you give me price range of 1 to 4 inch wafers in amount of 1 to 5 pieces? Do you offer LiNbO3 on the fused silica substrate?

UniversityWafer, Inc. Quoted:

Following the requirements,Pls see below for the offer on all the items,LN film on Silicon and fused silica substrate wafer

A. Lithium Niobate, LiNbO3, on Insulator (LNOI), thin film on SiO2 on silicon substrate, 4 inch wafers optical grade:

  • X-LN thin film:600nm/ SiO2:2μm (thermal) / Silicon substrate: 0.5mm (high resi.>10000Ω-cm)
  • X-LN thin film:600nm/ SiO2:4.7μm (thermal) / Silicon substrate: 0.5mm (high resi.>10000Ω-cm)

B. Lithium Niobate, LiNbO3, on fused silica (LNOS), thin film on SiO2 on fused silica substrate, 4 inch wafers. optical grade:

  • X-LN thin film:600nm/ SiO2:2μm (thermal) / fused silica substrate (high resi.>10000Ω-cm)
  • X-LN thin film:600nm/ SiO2:4.7μm (thermal) / fused silica substrate (high resi.>10000Ω-cm)