Ultra-Thin Gallium Arsenide (GaAs) Substrates

university wafer substrates

Ultra-Thin GaAs Wafers for Research

A postdoc requested a quote for the following:

Could you send me a quotation for two 50mm diameter 150um thick GaAs wafer? What would be the expected delivery time and do you know the carrier mobility of the wafer? Is it possible to receive the ultra-thin GaAs wafer without Si doping?

The wafers that you sent us work great. I ask how many of the ultra-thin GaAs wafers you have in stock item no. 6156?

Last time it was 13 and I bought 3, are there still 10 left or more?

UniversityWafer, Inc. Quoted:

Gallium Arsenide wafers, Prime Grade, DSP2"(50.8±0.5mm)Ø×110±15µm
VGF SI undoped GaAs [100]±0.5°, n-type Ro > 1E7 Ohmcm,
EPD<3200/cm²,
Both-sides-polished, EJ Flats,
Sealed under nitrogen in single wafer cassette.

Reference # 281233 for specs and pricing

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Thin Gallium Arsenide Substrates Applications

Thin gallium arsenide (GaAs) substrates are used in a variety of applications due to their unique properties, such as high electron mobility, direct bandgap, and the ability to operate at high frequencies. Here is a list of applications that utilize thin GaAs substrates:

  1. High-Frequency and High-Speed Electronics:

    • Microwave and Millimeter-Wave Devices: GaAs is used in devices like Monolithic Microwave Integrated Circuits (MMICs) and High Electron Mobility Transistors (HEMTs) for applications in radar, satellite communications, and wireless networks.
    • High-Speed Digital Integrated Circuits: GaAs substrates are used in digital circuits that require high-speed operation, such as those in supercomputers and advanced communication systems.

  2. Optoelectronics:

    • Light Emitting Diodes (LEDs): GaAs is used in the production of LEDs, particularly for applications requiring high efficiency and brightness.
    • Laser Diodes: Thin GaAs substrates are critical in the manufacture of laser diodes, used in applications ranging from fiber-optic communications to barcode scanners.
    • Photodetectors and Photovoltaic Cells: GaAs is used in high-efficiency photodetectors and solar cells, including multi-junction solar cells for space and terrestrial applications.

  3. Power Electronics:

    • Power Amplifiers: GaAs substrates are used in power amplifiers for mobile phones, wireless networks, and other RF applications due to their ability to handle high power levels and operate at high frequencies.

  4. Sensors:

    • Gas and Chemical Sensors: GaAs-based sensors are used for detecting gases and chemicals due to their sensitivity and ability to operate in harsh environments.
    • Biological Sensors: GaAs substrates are employed in biosensors for medical diagnostics and environmental monitoring.

  5. Quantum Computing and Advanced Research:

    • Quantum Dots and Quantum Wells: Thin GaAs substrates are used in the fabrication of quantum dots and wells for research in quantum computing and advanced semiconductor physics.
    • Research in Nanotechnology: GaAs is utilized in various nanotechnology applications due to its favorable electronic properties and compatibility with other materials.

These applications leverage the advantages of GaAs substrates, including their ability to support high-speed and high-frequency operation, their efficiency in optoelectronic devices, and their robustness in demanding environments.

 

Thin Gallium Arsenide Wafer Applications

  1. Think about it – blockchain acts as this huge ledger on steroids, distributed all over the internet to keep transactions safe but totally visible to everyone involved. : When we talk about what’s at the heart of our favorite glowing gadgets—like those bright LEDs or sharp lasers—it's often GaAs doing its magic in the background. When devices need to interact with light effectively, the direct band gap of this material is what does the trick by allowing superb emission and detection capabilities.

    gallium arsenide substrate LED

  2. High-Frequency Electronics : When we talk about zipping electrons around efficiently at sky-high frequencies, GaAs steps up as the ideal choice for anything from your kitchen microwave to advanced communication gear. Imagine having tiny powerhouses known as high-speed integrated circuits at work inside devices ranging from your smartphone’s signal booster to sophisticated radar technology—all thanks to its application in creating things like amplifiers and oscillators.

  3. Solar Cells : GaAs-based solar cells are highly efficient, especially in concentrated photovoltaic (CPV) systems. When you're aiming high—in say, aerospace—the right choice is these cutting-edge cells which easily beat conventional silicon-based options on efficiency.

  4. Monolithic Microwave Integrated Circuits (MMICs) : GaAs is often used in MMICs, which integrate multiple electronic functions onto a single chip. From chatting on mobile phones to streaming videos via satellite, these circuits are working hard behind the scenes in all sorts of communication gear.

  5. Thermal Imaging : Gallium Arsenide rocks at handling high speeds and a bunch of light spectrums, which is why it's perfect for seeing heat with thermal imaging devices. They're perfect for surveillance tasks, securing perimeters, and taking a closer look at industrial operations - quite the triple threat!

  6. RFID and NFC Technologies : Due to its efficiency at high frequencies, GaAs is also utilized in the development of RFID (Radio-Frequency Identification) and NFC (Near Field Communication) technologies, which require reliable, high-frequency components.

Thin GaAs Wafers Specfication By Application

The specifications for gallium arsenide (GaAs) substrates, including thickness, can vary depending on the specific requirements of each application. Below are the typical specs for various applications:

  1. High-Frequency and High-Speed Electronics:

    • Microwave and Millimeter-Wave Devices:
      • Substrate Thickness: Typically 100-200 µm.
      • Doping: Semi-insulating or n-type.
      • Epitaxial Layer: Can include multiple epitaxial layers of a few micrometers each.
    • High-Speed Digital Integrated Circuits:
      • Substrate Thickness: Around 100-150 µm.
      • Doping: n-type or semi-insulating.
      • Epitaxial Layer: Thin layers of 1-10 µm for specific device structures.

  2. Optoelectronics:

    • Light Emitting Diodes (LEDs):
      • Substrate Thickness: 100-200 µm.
      • Doping: p-type or n-type, depending on the device structure.
      • Epitaxial Layer: 5-10 µm thick, including multiple quantum wells.
    • Laser Diodes:
      • Substrate Thickness: 100-150 µm.
      • Doping: n-type or p-type.
      • Epitaxial Layer: Multiple layers totaling 1-10 µm.
    • Photodetectors and Photovoltaic Cells:
      • Substrate Thickness: 100-200 µm.
      • Doping: n-type or p-type for photodetectors, p-type for photovoltaic cells.
      • Epitaxial Layer: Typically 1-10 µm.

  3. Power Electronics:

    • Power Amplifiers:
      • Substrate Thickness: 100-150 µm.
      • Doping: Semi-insulating.
      • Epitaxial Layer: Several micrometers thick, depending on device requirements.

  4. Sensors:

    • Gas and Chemical Sensors:
      • Substrate Thickness: 100-200 µm.
      • Doping: n-type or p-type.
      • Epitaxial Layer: Thin layers of 1-5 µm.
    • Biological Sensors:
      • Substrate Thickness: 100-200 µm.
      • Doping: n-type or p-type.
      • Epitaxial Layer: Thin layers of 1-5 µm.

  5. Quantum Computing and Advanced Research:

    • Quantum Dots and Quantum Wells:
      • Substrate Thickness: 100-150 µm.
      • Doping: n-type or semi-insulating.
      • Epitaxial Layer: Quantum wells typically 10-30 nm, quantum dots even thinner.
    • Research in Nanotechnology:
      • Substrate Thickness: 100-200 µm.
      • Doping: Varies based on research needs.
      • Epitaxial Layer: Custom thicknesses depending on the experiment, often in the range of 1-10 µm.

These specifications are typical values and can vary based on the manufacturer and specific device requirements. Epitaxial layer thickness, doping levels, and substrate characteristics are often tailored to optimize performance for the intended application.