Gallium Nitride on Silicon Carbide (SiC) for Research & Production
Get Your GaN on SiC Quote FAST!
We also have the following
1. Do custom GaN wafers upon request from 2'' ~ 8''
2. P/E : Single side polished,SSP
3. P/P : Both sides polished,DSP
4. TBD by qty.: Pricing According to the quantity
5. Wafer Grade: Prime grade
6. Template thickness uniformity: < 10%
7. Pricing of GaN on Si & GaN on SiC pls contact our sales engineer,Due to the only indicated with the range of the epi thickness
Gallium Nitride on Silicon Carbide (SiC) Benefits
Scientists state that there is no other currently used wafer that compares in effciency, reliability and performace of GaN on SiC wafers.
GaN on Silicon Carbide Switching Losses are 50% less than silicon alone.
SiC switching loss is 50% less than Si wen an Si Diode is replaced with a Schottky diode. Go with SiC devices when you need FAST switching!
Below are just some of the GaN on SiC Substrates that we have available. Please send us your specs and quantity for us to quote.
GaN-on-Silicon Carbide (SiC)Wafer Series Prime grade |
||||||||||||
| Diameter | Orient. | Substrate Thickness | Surface Finish | GaN Template Thickness | Conduction Type | Dopant | Quantity | |||||
| 2" | <0001> | 350/500+/-25um | DSP | 100~3000nm | N/S.I-type | Si/Fe | </=25 | |||||
| 4" | <0001> | 350/500+/-25um | DSP | 100~3000nm | N/S.I-type | Si/Fe | </=25 | |||||
| 6" | <0001> | 350/500+/-25um | DSP | 100~3000nm | N/S.I-type | Si/Fe | </=25 | |||||