Scientists state that there is no other currently used wafer that compares in effciency, reliability and performace of GaN on SiC wafers.
GaN on Silicon Carbide Switching Losses are 50% less than silicon alone.
SiC switching loss is 50% less than Si wen an Si Diode is replaced with a Schottky diode. Go with SiC devices when you need FAST switching!
Below are just some of the GaN on SiC Substrates that we have available. Please send us your specs and quantity for us to quote.
GaN-on-Silicon Carbide (SiC)Wafer Series Prime grade |
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Diameter | Orient. | Substrate Thickness | Surface Finish | GaN Template Thickness | Conduction Type | Dopant | Quantity | |||||
2" | <0001> | 350/500+/-25um | DSP | 100~3000nm | N/S.I-type | Si/Fe | </=25 | |||||
4" | <0001> | 350/500+/-25um | DSP | 100~3000nm | N/S.I-type | Si/Fe | </=25 | |||||
6" | <0001> | 350/500+/-25um | DSP | 100~3000nm | N/S.I-type | Si/Fe | </=25 |