Silicon Nitride on Insulator Wafers (SiNOI)

What SiNOI Wafers for Photonic Applications?

For photonic applications, Silicon Nitride on Insulator (SiNOI) wafers need to meet specific specifications to ensure optimal performance and integration capabilities with photonic devices. These specifications typically focus on the material quality, layer thicknesses, optical properties, and surface quality, among other factors. Here's an overview of the key specs commonly used for SiNOI wafers in photonic applications:

These specifications can vary based on the specific requirements of the photonic devices being developed, such as wavelength of operation, power handling capabilities, and integration with electronic or other photonic components. Manufacturers and researchers often customize these parameters to optimize performance for their specific applications.

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What are Silicon Nitride on Insulator Wafers (SiNOI) Applications?

Silicon Nitride on Insulator (SiNOI) wafers are specialized materials used in the semiconductor and electronics industries. They consist of a layer of silicon nitride (Si3N4) on top of an insulating layer, usually silicon dioxide (SiO2), which itself is on a silicon substrate. Silicon nitride's standout traits—like its ability to resist heat and chemicals, along with being a top-notch insulator—make it super handy for all kinds of high-tech tasks. Here are some key applications of SiNOI wafers:

1. Integrated Photonics: SiNOI wafers are extensively used in integrated photonic devices because silicon nitride offers low optical loss at a wide range of wavelengths, including visible and near-infrared. Thanks to their low optical loss across a broad spectrum, SiNOI wafers are key players in building photonic devices like waveguides and modulators, ensuring our communications and sensors operate seamlessly.

2. Optoelectronics: The high refractive index contrast between silicon nitride and the underlying insulator enables the fabrication of high-quality optical devices such as light-emitting diodes (LEDs), photodetectors, and lasers that require precise control over light propagation.

3. Micro-Electro-Mechanical Systems (MEMS): SiNOI wafers provide a robust platform for MEMS devices due to the mechanical strength and chemical stability of silicon nitride. Silicon nitride's sturdy nature makes SiNOI wafers a go-to for crafting things like sensors and micro pumps—gadgets that are key in everything from cars to gadgets we use every day.

4. Biochemical Sensing: The biocompatibility and chemical inertness of silicon nitride make SiNOI wafers suitable for biochemical sensors and lab-on-a-chip devices. SiNOI wafers are key in crafting devices that can swiftly detect health issues, spot environmental hazards, and ensure food is safe to eat.

5. High-Frequency Electronics: SiNOI wafers' SiO2 layer acts like a shield, slashing unwanted electrical noise and beefing up performance for fast-moving tech—think RF parts, transistors, and those complex chips in your gadgets.

6. Quantum Computing: SiNOI wafers are being explored as a platform for quantum computing applications, particularly for creating photonic quantum circuits and qubits. The right mix in these wafers keeps quantum bits stable and lets them mesh well with our regular computer tech.

7. Energy Harvesting: The piezoelectric properties of silicon nitride can be harnessed in energy-harvesting devices, such as vibration and pressure sensors, to convert mechanical energy into electrical energy.

SiNOI wafers are real game-changers; their mix of traits nails it for top-tier tech, from sturdy sensors to quantum leaps.

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Silicon Nitride-on-Insulator (SiNOI) Wafers

A research scientist requested the following quote:

I hope this message finds you well. We at [Your Company Name] are in the process of sourcing Silicon Nitride-on-Insulator (SiNOI) wafers for our upcoming photonic applications project. To proceed, we kindly request a detailed quotation for the specific wafer specifications outlined below. For your convenience, the specifications have been attached to this email, and we also refer you to the following webpage for additional context.

Along with your quotation, please include the filled compliance sheet attached to this request. Should there be any deviations from the specifications listed, kindly highlight these in the compliance sheet. Alternatively, a confirmation that all specifications will be met is also appreciated.

Specifications for Silicon Nitride-on-Insulator (SiNOI) Wafers:

• Overall Substrate Specifications:

  • Wafer Diameter: 150 ± 0.5 mm
  • Primary Flat Orientation: {110} ± 1 degree
  • Primary Flat Length: 55-60 mm
  • Surface: Single Side Polished
  • Total Thickness Variation (TTV): <5µm
  • Bow: <60µm
  • Warp: <60µm
  • Edge Chips: None
  • Edge Exclusion: <7mm

• Handle Silicon Layer:

  • Material: Silicon
  • Growth Method: CZ (Czochralski)
  • Orientation: <100> ± 1°
  • Thickness: 500 µm ± 20 µm
  • Resistivity: 5-30 Ω-cm
  • Dopant: N-Type (Phosphorous)

• Buried Oxide Layer:

  • Material: Silicon dioxide
  • Growth Method: Thermal growth/PECVD
  • Thickness: 2.5 ± 0.1µm

• Device Layer:

  • Material: Silicon Nitride
  • Deposition Method: LPCVD
  • Thickness: 400 ± 20nm

• Miscellaneous Requirements:

  • Appearance: No particles, haze, stains, or scratches visible under bright-collimated light
  • Packing: Vacuum-sealed in a class 10 environment, double-layer packing, shipped in ultra-clean polypropylene boxes
  • Delivery Period: Within 30 weeks of order placement
  • Certificate: Vendor to provide a certificate of conformance to specifications for shipped product lots
  • Compliance: Vendor to provide point-by-point compliance in the table with numerical values where applicable

Referenc # 272457 for specs and pricing.