Targeted Stress LPCVD Nitride on Silicon Wafers
Targeted Stress LPCVD Nitride
Problem: Nitride films are often used in microelectronics and optoelectronics applications.
The problem is that nitride films can be very stress-sensitive, and if not deposited correctly, can lead to device failure.
Solution: UniversityWafer and partners developed a targeted stress LPCVD nitride process that can be customized with the use of a Tempress diffusion system. This low-stress LS SiN film offers 135 MPa internal stress, making it ideal for microelectronics and optoelectronics applications.
Contact us today to learn more about our affordable nitride on silicon wafers.
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Targeted Stress LPCVD Nitride SPECIFICATIONS
- Thickness range: 50Å – 4µm
- Thickness tolerance: +/-5%
- Within wafer uniformity: +/-5% or better
- Wafer to wafer uniformity: +/-5% or better
- Sides processed: both
- Refractive index: 2.05 – 2.35
- Film stress: Your target +/-50MPa Tensile Stress
- Wafer size: 50mm, 100mm, 125mm, 150mm, 200mm
- Wafer thickness: 100µm – 2,000µm
- Wafer material: Silicon, Silicon on Insulator, Quartz
- Temperature: 800C° – 820C°
- Gases: Dichlorosilane, Ammonia
- Equipment: Horizontal vacuum furnace
What Is Targeted Stress LPCVD Nitride?
Targeted Stress LPCVD Nitric oxide deposition on silicon wafers has been demonstrated for 
applications in micro-system technology and resonator physics. The nitride films are used in transduction and thin film membranes. Targeted Stress LPCVD nitride process should be used when you need to customize film stress for your respective applications.
This process uses a modular horizontal furnace to deposit the thin films. The process is suitable for silicon wafers and targets a variety of applications. During the film deposition, a thermal decomposition of the gaseous compounds causes a low-stress LPCVD Nitride film. The formation of the film is facilitated by a small-scale gas flow within the reactor.
A targeted stress LPCVD nitride process is an ideal solution for this type of application. It can be customized to meet the requirements of the customer. Just provide your application information to receive a fast quote. With this technology, you can build the micromechanical structures of your choice on silicon wafers. This method requires minimal initial investment and produces a thin film with high Young's modulus and toughness of 22.5 GPa.
What are Some Benefits of Targeted Stress LPCVD Nitride?
Targeted Stress LPCVD Nitric Oxide on Silicon Wafers has many benefits. It's more efficient and less expensive than Chemical Vapor Deposition (CVD). This results in high-yield that saves the operator's bottom line.
A targeted stress LPCVD nitride process can be customized for your specific application. It can be used to create highly functional micro-mechanical structures on silicon wafers. A sacrificial layer provides support for the structural layer. It can be removed to release the structural layer. A thin film of silicon nitride from LPCVD can be used for this purpose.
What are Some Low Stress Nitride Applications
LPCVD nitride on silicon wafers with a low internal stress can be used for memory devices. Combined with targeted stress nitride on silicon, low stress SiN enhances performance.
Targeted stress LPCVD nitride can be customized with the use of a Tempress diffusion system. LS SiN is a layered film of silicon that has a 135 MPa internal stress. If you need a low-stress LS SiN film, you can contact UniversityWafer, Inc. today. We can provide you with any thickness of nitride on silicon wafers at an affordable price.
LS CVD is a process that allows you to customize the film stress to match your requirements. It is a modular horizontal furnace designed for processing silicon wafers. The Tempress diffusion system is optimized to be used for forming Low-Stress LPCVD Nitride on Silicon. In this way, the low-stress film is formed without the need for sacrificial layers.
LS CVD nitride is a technique for fabricating micromechanical structures on silicon wafers. Its advantage is the ability to create custom-designed layers with a wide range of thickness. The resulting LPCVD Nitride films have a tensile stress and are less than 1.5 m thick. This technology offers a high-quality, cost-effective solution for micromechanical structure fabrication.
This technique enables the deposition of thin films of silicon nitride on silicon wafers with high-grade and low-cost components. The targeted stress LPCVD technique is capable of producing a wide range of materials, including polysilicon, LS SiN, and silicon dioxide. Moreover, the targeted stress LPCVD process is scalable, allowing the production of large quantities of nitride on silicon.
The film's thickness is crucial. A thin film will have a lower residual stress than a thicker one. It will have a lower density than a thin film that is applied to silicon oxide. The thin-film silicon nitride process is also compatible with polysilicon-based transistors. In addition to the higher purity, the process is cost-effective and has potential to make high-grade microchips.