"We are making thin-film electronic devices on the surface of silicon dioxide and using the silicon substrate as an electrical back gate. With wet thermal oxide, we found significant leakage through the oxide layer, making the devices unusable. Therefore, we require dry thermal oxide."
Dry Thermal Oxide Wafers for Thin-Film Electronic Devices
Researchers developing thin-film electronic devices, thin-film transistors (TFTs), MEMS, sensors, graphene devices, and back-gated semiconductor structures often prefer dry thermal oxide wafers because of their superior electrical insulation and lower leakage current compared to wet oxide layers.
Research Application Example:
For back-gated device fabrication, a common specification includes heavily doped silicon with a high-quality dry oxide dielectric layer:
Typical Research Specification:
100mm P-Type (100)
0.001-0.005 Ω-cm Resistivity
Single-Side Polished (SSP)
500µm Thickness
300nm Dry Thermal Oxide on the Polished Side
UniversityWafer, Inc. can supply custom SiO2 on silicon wafers with oxide thicknesses ranging from ultra-thin gate oxides to several microns. Available options include custom diameters, orientations, dopants, resistivity ranges, polish types, and research quantities.
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Silicon Dioxide for Thin-Film Electronic Devices
Silicon dioxide, also known as SiO2, is one of the most widely used insulating materials in semiconductor device fabrication. When grown as a dry thermal oxide layer on silicon, it provides a stable, high-quality dielectric surface for thin-film electronic devices, back-gated structures, sensors, MEMS, and thin-film transistor research.
Why Use Dry Thermal Oxide?
Dry thermal oxide is often preferred when researchers need a dense, uniform, low-leakage oxide layer. Compared with wet oxide, dry oxide can provide better electrical insulation, which is important for devices that use the silicon substrate as a back gate. This makes dry oxide wafers useful for thin-film electronics, gate dielectric studies, and semiconductor test structures.
Common Wafer Specifications
A typical substrate for thin-film electronic device research is a heavily doped silicon wafer with a dry oxide layer on the polished side. For example, researchers may request 100mm P-type <100> silicon wafers with 0.001-0.005 ohm-cm resistivity, 500µm thickness, single-side polish, and 300nm of dry thermal oxide.
Applications for SiO2 on Silicon Wafers
Silicon dioxide coated wafers are used in thin-film transistors, organic electronics, graphene devices, MEMS, microfluidics, photolithography, optical coatings, sensors, and university research. The oxide layer can act as an insulator, gate dielectric, masking layer, passivation layer, or surface for thin-film deposition.
Thin-Film Deposition on Silicon Dioxide
Researchers use SiO2 surfaces to deposit metals, semiconductors, oxides, polymers, and two-dimensional materials. A clean oxide surface helps improve film adhesion, pattern transfer, electrical isolation, and device repeatability. Depending on the experiment, wafers may require custom oxide thickness, dopant type, resistivity, polish, orientation, or diameter.
Custom Oxide Wafers for Research
UniversityWafer, Inc. supplies dry thermal oxide and wet thermal oxide silicon wafers for thin-film electronic device fabrication. Available options include custom oxide thicknesses, heavily doped silicon for back-gated devices, single-side or double-side polish, prime or test grade wafers, and small research quantities.
Need SiO2 on silicon wafers for thin-film electronics? Send us your required diameter, oxide thickness, dopant, resistivity, orientation, polish, wafer thickness, and quantity for a fast quote.