I am interested in 1-3, 6 inch sapphire wafers to use as carrier wafers for Si chips in deep/reactive ion etching processes using various gases (SF6, C4F8, CHF3, O2, etc). I am flexible on the specifications. I need a wafer suitable to withstand deep reactive ion etching conditions as I will
be using it as a carrier wafer when etching for extended periods of
time with different gases. However, I am not using the sapphire itself
in my project so there are no other necessary specifications I am
looking for.
Substrates for Reactive Ion Etching (RIE)?
Researchers Used Substrates for Reactive Ion Etching
A Phd requested that we quote Sapphire Substrates for their RIE project:
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Silicon-on-Insulator Used for Reactive Ion Etching
A postdoc requested a quote for the following:
I want to buy some SOI wafers: "SOI Device Layer: 220nm, Oxide: 2um, MFR PN: SMB-6P675-2-0.22”. Before I make the order, may I know the doping level of the Boron?
May I get some advice from you? I hope to remove the silicon atop (on the SOI wafer) by wet etching or reactive ion etching. Would the silicon oxide surface be smooth?
Besides, why most SiO2 on Si wafers (on your website) are wet thermal oxide and not dry thermal oxide? (I actually want to buy 2-micron thick dry thermal oxide on silicon wafers).
Reference #249995 for specs and pricing.
What is Reactive Ion Etching (RIE)?
A Physicist Requested the Following quote:
I need two silicon carbide substrates, double side polished, 25.4mm diameter, as thick as possible. Please include shipping cost with quote.
Reference #214215 for specs and pricing.
Reactive ion etching (RIE) is a type of plasma etching process used in microfabrication and semiconductor manufacturing to remove material from the surface of a substrate. The process uses a plasma, which is a mixture of charged particles, to chemically etch away the material.
In a RIE system, a reactive gas is introduced into the plasma chamber and ionized by an RF power source. The ionized gas particles then react with the surface of the substrate to remove material, while a physical etch mechanism helps to remove the etched material from the surface. The process is typically used to pattern or etch materials such as silicon, silicon dioxide, and silicon nitride.
RIE is a highly controlled and precise process, making it an important tool in the production of microelectronic devices and integrated circuits.
What Substrates are Used for Reactive Ion Etching
Reactive ion etching (RIE) can be used on a wide range of substrate materials, including:
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Silicon: Silicon is one of the most commonly used substrate materials for RIE, as it is a key material in the production of microelectronic devices and integrated circuits.
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Silicon dioxide (SiO2): SiO2 is a common insulating material used in microelectronics, and RIE is used to pattern and etch SiO2 layers in the manufacture of integrated circuits.
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Silicon nitride (Si3N4): Si3N4 is a material with high resistance to thermal and chemical degradation, making it useful for a variety of applications in microelectronics. RIE is used to pattern and etch Si3N4 layers in the manufacture of integrated circuits.
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Gallium arsenide (GaAs): GaAs is a compound semiconductor material that has a high electron mobility, making it useful for high-speed electronic devices. RIE is used to pattern and etch GaAs layers in the manufacture of electronic devices.
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Gallium Nitride (GaN): GaN is a wide bandgap semiconductor material that is useful for high-power and high-temperature electronics. RIE is used to pattern and etch GaN layers in the manufacture of electronic devices.
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Metal alloys: RIE can also be used to etch metal alloys, such as aluminum, copper, and titanium, which are used as interconnects and electrical contacts in microelectronics devices.
These are some of the most common substrates used for RIE, but other materials such as polymers, ceramics, and other compound semiconductors can also be etched using RIE.