Researchers use sapphire for various RF components for 5G.
Below is one specs researchers use.
4” Sapphire 0.380+/-0.03mm thick, 4” 100m
m diameter C Plane Sapphire, two polished surface. Standard TTV and BOW <20um,qty 7pcs on shelf - 1 week delivery
Scientist: I am writing this mail on behalf of Ultrafast and Terahertz Lab, IISER Kolkata, India. We have been using sapphire substrates (ID:1251) from university wafer for our terahertz spectroscopy experiments and they work fine for our needs. Thank you for the best quality.
The following item was used.
Sapphire Item #1251 50.8mm 430um DSP C-M plane 0.2 Deg
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We are using it for the mid-infrared applications. So is it possible to have 1~2 piece of sapphires (1cm*1cm) for us to test the optical properties? Just the same sapphire wafer as "C- plane, 1cm x1cm x430um thick, Double side polished, Ra<1nm " as we usually purchased before? We would like to make sure the infrared optical permittivity before we buy a lot more wafers. Let me know if it is possible to have 1~2 pieces of 1cm*1cm*430um samples.
C-plane<0001> sapphire substrate
Double side polish
Size 1cm*1cm / SQ 10X10mm
Thickness 300~500 um +/-25um
Surface roughnesss < 1nm Ra
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We are wondering if your company can fabricate metal thin films on your sapphire wafers. We are looking for providers of thin films on sapphire of the general structure: sapphire (base) - metal M (5-20nm) - Au (500-1000 nm). here, a thin metal of element M (where M can be a range of different types of metal) of thickness 5-20nm, encapsulated by a thick layer of gold. the deposition needs to be done sequentially and immediately, so the metal M does not come into contact with ambient before being protected my the gold layer. we are looking for high purity metal depositions. another question we have is whether you have the capacity to deposit thin films of metallic borides or alternatively of elemental boron? this would also be of interest for us.
UniversityWafer, Inc. can deposit, by sputtering or Electron Beam Evaporation thin films of various metals (such as Ti, Fe, Cu, Ni, W, Cr) and then a film of Au.
In the EBEv equipment we can deposit on 4"Ø wafers layers of several different metals without having to open the reactor.
In the sputtering reactor we can do the same but we might be more limited as to our choice of targets.
The inner metal films should be at least 20nm thick to assure uniform covering of the substrate.
I think that depositing a film of Boron is not a problem although for sputtering we might not have such a target.
Metal Borides are not a fundamental problem provided they do not dissociate during EB evaporation, and not a problem for sputtering provided we have appropriate targets.
I do not know off-hand if there are any problems with the various metals adhering to Sapphire.
Minimum Order Quantity for each type of film structure is 8 of 4"Ø wafers for EVEv and either 1 or 22 4"Ø wafers for sputtering (depending on the reactor used).
We await your specifications
Research clients have used 100mm sapphire wafers 800 micron thick. The researchers used the wafer as a backing wafer for GaAs grinding/polish process. Rest of the spec same as you standard product: 2562. C-M plane 0.2°, Double Side Polished, Micro-roughness: Ra<0.35nm, Primary flat length: 32.5±2.5mm. Warp<21um, TTV<16um. The resercher purchased the following item.
Sapphire Item #2562
100mm <0001> 650um DSP C-M plane 0.2°, Double Side Polished, Micro-roughness: Ra<0.35nm, Primary flat length: 32.5±2.5mm. Warp<21um, TTV<16um
Research scientists have used the following sapphire specifications for their thin film research.
Sapphire Item #1251
50.8mm 430um DSP C-M plane 0.2 Deg