Silicon Dioxide Wafers in Stock for Research and Production 

Silicon dioxide (SiO2) wafers, also known as thermal oxide silicon wafers, are widely used in MOSFET backgate structures, MEMS fabrication, graphene research, photolithography, and integrated circuit development. UniversityWafer supplies high-quality thermal oxide wafers with standard and custom oxide thicknesses for research laboratories, universities, and semiconductor manufacturers worldwide.

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Silicon Dioxide Wafers for MOSFET & Research Applications

Researchers frequently request silicon dioxide (SiO2) wafers with thermal oxide layers for transistor fabrication, dielectric testing, MEMS, and graphene research. A common application is using the oxide-coated wafer as a MOSFET backgate, where oxide thickness and crystal orientation are critical for device performance.

A typical research specification includes:

  • Diameter: 100 mm
  • Material: Prime Grade Silicon
  • Orientation: P(100)
  • Resistivity: 1–10 Ω-cm
  • Thickness: 500 µm
  • Surface: Single-Side Polished (SSP)
  • Oxide: 300 nm Thermal SiO2

Need a different oxide thickness? UniversityWafer supplies custom thermal oxide wafers with oxide layers from a few nanometers to several microns, manufactured to your specifications.

Get Your Silicon Dioxide Wafer Quote FAST! Or, Buy Online and Start Researching Today!





Silicon Dioxide Wafers for Research

Silicon dioxide wafers, also called SiO2 wafers or thermal oxide wafers, are silicon substrates coated with a controlled oxide layer. These wafers are widely used in transistor research, MOSFET backgate structures, MEMS, dielectric testing, insulation layers, photolithography, and thin film deposition.

UniversityWafer supplies thermal oxide silicon wafers in standard and custom oxide thicknesses, including oxide layers near 280 nm, 300 nm, 500 nm, 1 micron, and other specifications upon request.

Why Use Silicon Dioxide on Silicon?

SiO2 is commonly used because it provides an electrically insulating surface while remaining compatible with standard silicon processing. A silicon dioxide layer can act as a gate dielectric, isolation layer, masking layer, or surface for thin film deposition and device fabrication.

  • Electrical insulation: Useful for transistor, MOSFET, MEMS, and sensor applications.
  • Process compatibility: Works with common semiconductor fabrication steps.
  • Controlled oxide thickness: Available as thin native oxide, thermal oxide, or deposited oxide.
  • Surface uniformity: Important for photolithography, deposition, and device testing.
  • Backgate applications: 280-300 nm SiO2 on silicon is often used for transistor and graphene research.

Common Silicon Dioxide Wafer Specifications

Researchers often request silicon dioxide wafers with specifications such as:

  • 100 mm silicon wafer diameter
  • P-type boron doped silicon
  • (100) crystal orientation
  • 1-10 ohm-cm resistivity
  • Single-side polished surface
  • 500 µm wafer thickness
  • 280-300 nm thermal oxide layer

Applications for SiO2 Wafers

Silicon dioxide coated wafers are used across many research and production processes, including:

Thermal Oxide vs Native Oxide

Native oxide is a very thin layer that forms naturally on silicon when exposed to air. Thermal oxide is grown intentionally at high temperature to create a more controlled, uniform, and useful SiO2 film. For device fabrication, researchers usually choose thermal oxide wafers because the oxide thickness and uniformity can be specified.

Order Silicon Dioxide Wafers

UniversityWafer can provide silicon dioxide wafers for universities, laboratories, startups, and semiconductor manufacturers. Submit your diameter, orientation, dopant, resistivity, wafer thickness, polish, oxide thickness, and quantity for a fast quotation.

Related Silicon Dioxide & Thermal Oxide Resources