We are developing a fabrication process for near-infrared photodetectors integrated with conventional electronic devices. Do you offer germanium deposited on silicon wafers, or can you fabricate Ge-on-Si substrates for research?
Substrates for Near-Infrared Photodetectors
UniversityWafer supplies silicon, germanium, Ge-on-Si, GaN, AlGaN, SiC, and intrinsic silicon wafers for photodetectors operating in the visible, ultraviolet, and near-infrared (NIR) spectrum. Our substrates are used in photodiodes, photodetector arrays, CMOS-compatible sensors, satellite imaging systems, and optoelectronic research.
An electrical engineering researcher requested:
Reference #93774 for specifications and pricing.
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Position-Sensitive Detectors for Space Applications
A customer developing a four-quadrant position-sensitive detector (PSD) for satellite sun sensing requested substrates capable of operating from 200–1100 nm with low dark current, low capacitance, and reliable performance in low Earth orbit.
- 25 × 25 mm die size
- 20 × 20 mm active area
- Operating wavelength: 200–1100 nm
- Dark current < 3 nA
- Capacitance < 3000 pF
- Operating temperature: -40°C to 75°C
Reference #94426 for pricing.
GaN, AlGaN & SiC Photodetector Wafers
Wide bandgap materials such as GaN, AlGaN, and SiC are commonly selected for ultraviolet photodetectors because of their low leakage current, radiation resistance, and excellent performance in harsh environments.
A MEMS researcher requested single-crystal GaN or AlGaN wafers for fabricating blue and UV photodetectors and semiconductor diodes with low leakage current.
Reference #115249 for specifications and pricing.
Black Silicon for High-Efficiency Photodetectors
Black silicon features nanoscale surface structures that dramatically reduce reflection and increase optical absorption across the visible and near-infrared spectrum. This makes black silicon an excellent material for high-sensitivity photodetectors, image sensors, thermal cameras, terahertz devices, and advanced solar cells.
- Higher optical absorption
- Improved photodetector sensitivity
- Reduced surface reflection
- Visible, NIR, and terahertz applications
- Image sensors and photovoltaic devices
Undoped Silicon for PIN Photodetector Arrays
Researchers developing PIN photodiode arrays frequently request high-resistivity float-zone silicon because of its low defect density and excellent electrical performance.
We are looking for 3-inch, double-side polished, intrinsic float-zone silicon wafers with resistivity greater than 8,000 Ω·cm for PIN photodetector arrays.
UniversityWafer Recommended:
- 3" SEMI Prime silicon wafer
- 525 ±25 µm thickness
- Float-zone intrinsic silicon
- <100> orientation ±0.5°
- >8,000 Ω·cm resistivity
- Double-side polished (DSP)
Reference #131421 for pricing and availability.
What Substrates Are Used in Photodetectors?
Photodetectors convert light into electrical signals and are used in optical communications, imaging systems, spectroscopy, biomedical instruments, autonomous vehicles, satellite sensors, industrial automation, and scientific research. The choice of substrate directly affects spectral response, dark current, sensitivity, and operating wavelength.
Common photodetector substrates include silicon, germanium (Ge), GaAs, GaN, SiC, and silicon-on-insulator (SOI). Each material is selected based on the wavelength range and device performance required.
Silicon Photodetectors
Silicon is the most widely used substrate for photodetectors operating in the visible and near-infrared spectrum. Silicon photodiodes offer low noise, fast response times, excellent uniformity, and compatibility with standard CMOS fabrication processes.
Researchers frequently use high-resistivity float-zone silicon, intrinsic silicon, double-side polished wafers, and SOI substrates to fabricate photodiodes, phototransistors, avalanche photodiodes (APDs), and position-sensitive detectors (PSDs).
Germanium-on-Silicon (Ge-on-Si) Photodetectors
Germanium deposited on silicon extends the detection wavelength beyond conventional silicon devices into the near-infrared region. Ge-on-Si photodetectors are widely used in fiber-optic communications, LiDAR, optical interconnects, and integrated silicon photonics because germanium efficiently absorbs wavelengths around 1.3 μm and 1.55 μm.
Combining germanium with silicon also enables integration with CMOS manufacturing, making Ge-on-Si an attractive platform for next-generation photonic integrated circuits.
Wide Bandgap Photodetectors
Wide bandgap semiconductors such as GaN, AlGaN, and SiC are commonly used for ultraviolet photodetectors. Their high breakdown voltage, low leakage current, and radiation resistance make them suitable for aerospace, flame sensing, environmental monitoring, and harsh-environment electronics.
Transparent Conductive Electrodes
Many photodetectors incorporate transparent conductive films to maximize light transmission while maintaining excellent electrical conductivity. Common transparent electrode materials include Indium Tin Oxide (ITO), graphene, conductive oxides, and dielectric-metal-dielectric (DMD) multilayers.
These coatings are widely used in flexible electronics, image sensors, display technologies, and high-efficiency optoelectronic devices.
Ohmic and Schottky Contacts
Electrical contacts play a critical role in photodetector performance. Ohmic contacts minimize contact resistance and improve carrier collection, while Schottky contacts are often used in high-speed and ultraviolet photodetectors where low capacitance and fast switching are important.
The choice of contact metal depends on the semiconductor material and desired electrical characteristics, with gold, titanium, nickel, aluminum, platinum, and germanium alloys commonly used in device fabrication.
Black Silicon for High-Sensitivity Photodetectors
Black silicon features a nanostructured surface that dramatically reduces reflection and increases light absorption across the visible and near-infrared spectrum. This enhanced absorption improves photodetector sensitivity and has led to applications in imaging systems, biosensors, terahertz devices, and high-efficiency photodiodes.
Photodetector Arrays
Photodetector arrays consist of multiple photodiodes fabricated on a single semiconductor substrate. They are widely used in spectrometers, machine vision, satellite imaging, medical diagnostics, optical communications, and position-sensitive detectors. Silicon remains the preferred material for visible-light arrays, while germanium and III-V compound semiconductors extend detector performance into longer infrared wavelengths.
Custom Photodetector Substrates
UniversityWafer supplies silicon, germanium, SOI, GaN, AlGaN, SiC, and custom semiconductor substrates for photodetector research. Available options include float-zone silicon, intrinsic silicon, double-side polished wafers, epitaxial wafers, oxide-coated wafers, and custom substrate specifications for UV, visible, and near-infrared detector development.