"We are awaiting the results of an NSF SBIR grant application and require 100 pieces of 150mm x 0.675mm R-plane sapphire wafers with SSP finish for the growth of epitaxial ferroelectric films."
150mm Sapphire Wafers for Epitaxial Ferroelectric Film Growth
6 inch sapphire wafers (150mm sapphire substrates) are widely used for the growth of epitaxial ferroelectric films, nitride semiconductors, optical coatings, and advanced thin-film materials. Their excellent thermal stability, low defect density, and high crystalline quality make sapphire one of the most popular substrates for research and production environments.
A government-funded research team requested pricing for the following sapphire wafer specification:
These R-plane sapphire substrates are commonly used in materials science, photonics, oxide electronics, and thin-film deposition research where high crystal quality and excellent surface properties are required.
Reference #225154 for specifications and pricing.
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Available Sapphire Wafer Diameters
UniversityWafer supplies sapphire substrates in standard and custom diameters for semiconductor, optical, LED, GaN, and thin-film research applications.
- 1" Sapphire Wafers
- 2" Sapphire Wafers
- 3" Sapphire Wafers
- 4" Sapphire Wafers
- 6" Sapphire Wafers (150mm)
- 8" Sapphire Wafers (200mm)
- 12" Sapphire Wafers (300mm)
Custom sapphire wafer orientations including C-plane, R-plane, A-plane, and M-plane sapphire are available upon request.
6 Inch Sapphire Wafers for GaN Epitaxy and Advanced Semiconductor Research
A materials research scientist requested pricing for 6 inch sapphire wafers used to grow Gallium Nitride (GaN) structures for exploratory research and grant-funded semiconductor projects.
"Our group is growing GaN-based structures and is preparing exploratory grant applications to develop advanced nitride semiconductor devices. We are interested in 6 inch thick sapphire wafers suitable for GaN epitaxy. The requested specification was: 6" diameter, C-plane orientation, 0.2° off-axis, 1000 ±25 µm thickness, SSP surface finish, Prime/Epi-Ready grade."
UniversityWafer supplied a quotation for 150mm sapphire substrates with the following specifications:
- Diameter: 6 inch (150 mm)
- Orientation: C-plane, 0.2° off-axis
- Thickness: 1000 ±25 µm
- Surface Finish: Double Side Polished (DSP)
- Grade: Prime, Epi-Ready
- Packaging: Individually packed in single wafer cassettes
Reference #261374 for specifications and pricing.
Why Use Sapphire Wafers for Gallium Nitride Growth?
Sapphire substrates (Al₂O₃) are among the most widely used materials for growing Gallium Nitride (GaN) epitaxial layers. Sapphire provides excellent thermal stability, chemical resistance, optical transparency, and compatibility with high-temperature growth techniques such as MOCVD and HVPE.
Because sapphire wafers can withstand the demanding conditions required for nitride semiconductor growth, they are commonly used to manufacture LEDs, laser diodes, RF devices, photonic components, and power electronics.
What is Gallium Nitride (GaN)?
Gallium Nitride (GaN) is a wide-bandgap III-V semiconductor that has become one of the most important materials in modern electronics and optoelectronics. GaN offers high electron mobility, excellent thermal conductivity, and the ability to operate at high voltages, frequencies, and temperatures.
Most GaN devices are based on the wurtzite crystal structure, which consists of a hexagonal lattice formed by alternating gallium and nitrogen atoms. This crystal structure enables efficient light emission and superior electronic performance compared to many traditional semiconductor materials.
Applications of GaN-Based Structures
- Blue, green, and ultraviolet LEDs
- Laser diodes
- High Electron Mobility Transistors (HEMTs)
- RF and microwave devices
- Power electronics
- Photonic and optoelectronic devices
- High-temperature semiconductor systems
Researchers continue to explore new GaN structures for advanced applications in photonics, wireless communications, electric vehicles, renewable energy systems, and next-generation semiconductor technologies.