An Associate Professor researching Millimeter-Waves Device Technology Based Wide Band Gap Materials requested the following quote:
Can you send me a quotation for each heterostructure? I am interested primarily in this offer:
2" bulk GaN wafer, Thickness is 350um .N-type(un-doped), A level.
Can you give me more details on the technical synthesis of the material, dislocations rate, the value of the residual doping, the surface polarity, the number of macro-defects.
Reference #211933 for specs and pricing.
An Associate Professor of Electrical Engineering requested the following quote:
Do you have the wafer such as p+GaAsSb on InP? (GaAsSb is lattice-matched to InP.) We are planning to have a double heterojunction bipolar transistor (DHBT) using GaAsSb in the future. Could you comment on the epi-capability of the following structure? Could you provide a rough quotation for the full DHBT structure? I would like to request the entire structure not only 20-nm-thick GaAsSb on the InP structure.
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A nanotechnology engineer requested a quote for the following:
We are interested in wafers with thicknesses of 20-50 um which are suitable for silicon heterojunction solar cell fabrication.
Reference #210307 for specs and pricing.
A research scholar requested the following quote
We are working on silicon-based heterojunction solar cells. We need to do FTIR characterization of a very thin ( around 10nm ) hydrogenated amorphous silicon (a-Si: H) layer deposited over a single side polished silicon wafer. But due to the low absorption of a-Si: H films in the IR region, we are unable to get the signal from nm range thin a-Si: H films. We are looking to get the modified Silicon wafer of Trapezoidal shape in order to enhance the signal by coupling IR radiation into a wafer through multiple internal reflections. Kindly let us know if you can provide us with the Trapezoidal shape n-type Single side polished silicon wafer. Note - we are already able to get the signal for a thick film of more than 150 nm using Thermo-fisher Nicolet iS50 FTIR instrument in transmission mode.
Reference #264605 for specs and pricing.
A heterojunction is a type of semiconductor junction formed by two different types of semiconducting materials with different bandgaps. In other words, it is a boundary or interface between two different semiconductor materials, where the crystal structures of the two materials are different.
The junction between the two materials has unique electronic and optical properties that are different from those of the individual materials. The bandgap of the heterojunction is generally narrower than that of the wider bandgap material, which allows for more efficient charge carrier transfer across the junction.
Heterojunctions are widely used in electronic and optoelectronic devices such as transistors, solar cells, light-emitting diodes (LEDs), and lasers. They offer advantages such as improved efficiency, reduced power consumption, and enhanced performance over traditional homojunctions, which are formed by a single type of semiconductor material.
There are several substrates that are commonly used to fabricate heterojunction semiconductors, depending on the specific materials being used and the desired properties of the resulting heterojunction. Here are some examples:
Silicon (Si): Silicon is a commonly used substrate material for heterojunctions, particularly for III-V compound semiconductors such as gallium arsenide (GaAs) and indium phosphide (InP). This is because silicon has a similar lattice constant to these materials, which allows for high-quality epitaxial growth.
Sapphire (Al2O3): Sapphire is often used as a substrate material for heterojunctions involving wide-bandgap semiconductors such as gallium nitride (GaN) and aluminum nitride (AlN). This is because sapphire has a high thermal conductivity and can withstand high temperatures, making it suitable for growth processes such as molecular beam epitaxy (MBE) and metal-organic chemical vapor deposition (MOCVD).
Quartz (SiO2): Quartz is sometimes used as a substrate material for heterojunctions involving silicon carbide (SiC). This is because quartz has a similar crystal structure to SiC and can provide a suitable template for epitaxial growth.
Zinc oxide (ZnO): Zinc oxide is a substrate material that is often used for heterojunctions involving other oxide materials such as titanium dioxide (TiO2) and indium oxide (In2O3). This is because ZnO has a similar crystal structure to these materials and can provide a high-quality template for epitaxial growth.
Overall, the choice of substrate material for a heterojunction depends on factors such as the specific semiconducting materials being used, the desired properties of the resulting heterojunction, and the growth techniques being employed.