III-V Substrates In Stock for Research and Production

university wafer substrates

What is  The Maximum Carrier Concentration Achievable for InSb and InAs Substrates

A corporate buyer requested the following quote:

We have a university professor as a customer who is looking for the following three types of substrates for research purposes: InSb - P type InAs - P type GaAs - Undoped The size requirement for all substrates is 10mm x 10mm x 0.5mm, with one side polished. Would it be possible to purchase these substrates from you? If the specifications mentioned above are not available, could you please provide us with the specifications you currently offer for reference?

Additionally, could you kindly let us know the maximum carrier concentration achievable for InSb and InAs substrates? 

Reference #318705  for specs and pricing.

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III-V Wafers in Stock:

Gallium Arsenide (GaAs)

Gallium Antimonide (GaSb)

Gallium Phosphide (GaP)

Indium Phosphide (InP)

Indium Arsenide (InAs)

Indium Antimonide (InSb)

Why Are III-V Semiconductors Substrates Great for Optoelectronic Use?

III-V semiconductor substrates are excellent for optoelectronic applications because of their unique material properties that make them highly suitable for devices that interact with light (e.g., lasers, LEDs, photodetectors). Here’s why:

1. Direct Bandgap

  • Most III-V semiconductors (like GaAs, InP, and GaN) have a direct bandgap, meaning they can efficiently emit and absorb light. This property is essential for applications like light-emitting diodes (LEDs), laser diodes, and photovoltaic cells.
  • For comparison, silicon has an indirect bandgap, making it much less efficient for emitting light.

2. Wide Range of Bandgap Energies

  • III-V semiconductors offer a broad spectrum of bandgap energies, from 0.17 eV (InSb) to 6.2 eV (AlN). This flexibility allows them to be used across the entire optical spectrum, from infrared (IR) to ultraviolet (UV).
  • Example: GaAs is widely used for infrared devices, while GaN and its alloys cover the blue and UV ranges.

3. High Electron Mobility

  • Many III-V materials exhibit superior electron mobility compared to silicon. This results in faster carrier transport, which is beneficial for high-speed optoelectronic devices and high-frequency communications.

4. Tailorability via Alloying

  • By alloying III-V semiconductors (e.g., AlGaAs, InGaN), engineers can precisely tune the material's electronic and optical properties, such as the bandgap and refractive index. This makes III-V substrates adaptable for specific applications.

5. Low Optical Loss

  • III-V materials typically exhibit low optical losses, making them ideal for high-efficiency lasers and waveguides.

6. Compatibility with Heterostructures

  • III-V semiconductors support heterostructures and quantum wells, enabling advanced optoelectronic devices with high performance, like multi-junction solar cells and high-brightness lasers.

7. Thermal and Chemical Stability

  • Certain III-V materials, like GaN, are highly stable at elevated temperatures and under intense optical radiation, which is essential for high-power and durable optoelectronic devices.

Common Applications of III-V Semiconductors in Optoelectronics:

  • LEDs: GaN for visible light, AlGaAs for infrared.
  • Lasers: GaAs-based for telecommunication; InP-based for optical fiber communications.
  • Photodetectors: InGaAs for near-IR detection.
  • Solar Cells: GaAs-based multi-junction cells for high-efficiency photovoltaics.

Their combination of excellent optical and electronic properties makes III-V semiconductors the materials of choice for advanced optoelectronic devices.

III-V Crystallize with High Degree of Stoichiometry

We have both n-type and p-type. Our III-V wafers have high carrier mobilities and direct energy gaps.

What are III-V wafers used for?

Gallium Arsenide (GaAs)

second most common in use after silicon, commonly used as substrate for other III-V semiconductors, e.g. InGaAs and GaInNAs. Brittle. Lower hole mobility than Si, P-type CMOS transistors unfeasible. High impurity density, difficult to fabricate small structures. Used for near-IR LEDs, fast electronics, and high-efficiency solar cells. Very similar lattice constant to germanium, can be grown on germanium substrates.

Gallium Phosphide (GaP)

Used in early low to medium brightness cheap red/orange/green LEDs. Used standalone or with GaAsP. Transparent for yellow and red light, used as substrate for GaAsP red/yellow LEDs. Doped with S or Te for n-type, with Zn for p-type. Pure GaP emits green, nitrogen-doped GaP emits yellow-green, ZnO-doped GaP emits red.

Gallium Animonide (GaSb)

Used for infrared detectors and LEDs and thermophotovoltaics. Doped n with Te, p with Zn.

Indium Phosphide (InP)

Commonly used as substrate for epitaxial InGaAs. Superior electron veloxity, used in high-power and high-frequency applications. Used in optoelectronics.

Indium Arsenide (InAs)

Used for infrared detectors for 1â€"3.8 µm, cooled or uncooled. High electron mobility. InAs dots in InGaAs matrix can serve as quantum dots. Quantum dots may be formed from a monolayer of InAs on InP or GaAs. Strong  photo-Denber emitter, used as a terahertz radiation source.