Czochralsk (CZ) Process Growing of Silicon Wafers

G. MüllerP. Rudolph, in Encyclopedia of Materials: Science and Technology, 2001

Crystal Growth from the Melt

The authors delve into the historical developments and theories of crystal growth as well as practical applications of crystal growth techniques and characterizations.
Chapter 2 focuses on the nucleation of the surface and discusses the equilibrium crystal-ambient phase, nucleus formation, rate of nucleation, saturation nucleus density, second-layer nucleation in homoepitaxy.  The chapter also covers the mechanism of clustering in heteroepitaxy, and the effects of surfactants on nucleation.

Crystal Growth Technique

Part B of the book covers the history of magnetic liquid-encapsulated growth, magnetic field interactions with the melt, dislocation density, magnetic field effects on impurity segregation, optical characterization of Indium Phosphide (InP) that is Iron (Fe) doped.

Czochralski (Cz) Growth applications of Single Crystals for fabrication wafers to make Semiconductors and Solar Cells.

Handbook of Crystal Growth

Edited by Thomas F. Kuech

This handbook has two parts and cites the work of numerous authors to guide semiconductor professionall through the various techniques to grow and work with crystals.
The First Part: Basic techniques

• Epitaxy for Energy Materials - Roberto Fornari
• Hydride Vapor Phase Epitaxy for Current III-V and Nitride Semiconductor Compound Issues - Evelyn Gil et al
• The Science and Practice of Metal-Organic Vapor Phas Epitaxy (MOVPE) – Robert M. Biefeld et al
• Principles of Molecular Beam Epitaxy – Aaron J. Ptak
• Molecular Beam Epitaxy with Gaseous Sources – Hajime Asahi
• Liquid-Phase Epitaxy – Michael G. Mauk
• Solid-Phase Epitaxy – Brett C. Johnson, et al
• Pulsed Laser Deposition (PLD) – Hiroshi Fujioka
• Vapor-Liquid-Solid Growth of Semiconductor Nanowires – Jon M. Redwing et al
• Selective Area Masked Growth (Nano to Micro) – Jeong Dong Kim et al
• Organic van der waals epitaxy versus Tepmlated Growth by Organic-Organic Heteroepitaxy – Clemens Simbrunner, Helmut Sitter
• Epitaxy of Small Organic Molecules – Paul G. Evans, Josef W. Spalenka
• Epitaxial Growth of Oxide Films and Nanostructures – Hidekazu Tanaka
• Epitaxy of Carbon-Based Materials: Diamond Thin Film – Hongdong Li
• Magnetic Semiconductors – Fumihiro Matsukura, Hideo Ohno
• MOCVD of Nitride – Hiroshi Amano
• Molecular Beam Epitaxy of Nitrides for Advanced Electronic Materials – G. Koblmuller, J.R. Lang, E.C. Young, J.S. Speck
• Epitaxial Graphene – D. Kurt Gaskill

The Second Part: Materials, Processes, and Technology

• Chemical Vapor Deposition of Two-Dimensional Crystals – Zachary R. Robinson, Scott W. Schmucker, Kathleen M. McCreary, Enrique D. Cobas
• Kinetic Processes in Vapor Phase Epitaxy – Nathan Newman, Mahmoud Vahidi
• Metal Organic Vapor Phase Epitaxy Chemical Kinetics – Thomas F. Kuech
• Transport Phenomena in Vapor Phase Epitaxy Reactors – Roman Talalaev
• Nucleation and Surface Diffusion in Molecular Beam Epitaxy – Tatau Nishinaga
• Predicted Thermal – and Lattice-Mismatch Stresses – E. Suhir
• Low-Temperature and Metamorphic Buffer Layers – John E. Ayers
• Self-Assembly in Semiconductor Epitaxy: From Growth Mechanisms to Device Applications – Arnab Bhattacharya, Bhavtosh Bansal
• Atomic Layer Depostion – H.C.M. Knoops et al
• Silicon Carbide Epitaxy – Marek Skowronski, Tsunenobu Kimoto
• In-Situ Characterization of Epitaxy – April S. Brown, Maria Losurdo
• X-Ray and Electron Diffraction for Epitaxial Structures – Mark S. Goorsky
• Growth of III/V’s on Silicon: Nitride, Phosphides, Arsenides and Antimonides – Kerstin Volz et al
• Heteroepitaxial Growth of Si, Si1-xGex-, and Ge-Based Alloy – Osamu Nakatsuka, Shigeaki Zaima